13005 транзистор схема подключения

Транзисторы MJE13005(13005)и MJE13009(13009) .

Транзисторы MJE13005(13005)

Т ранзисторы кремниевые структуры n-p-n, мощные высоковольтные переключающие. Используются в импульсных преобразователях напряжения(электронных трансформаторах), приводах и регуляторах. Выпускаются в корпусе TO-220 Тип прибора указывается на корпусе.
На рисунке ниже — цоколевка MJE13005(13005).

Наиболее важные параметры.

Коэффициент передачи тока у MJE13005 может быть от 10 до 60.

Граничная частота передачи тока — 4МГц.

Максимальное напряжение коллектор — эмиттер — 400 в.

Максимальный ток коллектора постоянный — 4 А, переменный — 8 А

Напряжение насыщения коллектор-эмиттер при токе коллектора 4А, базы 1 А — 1в.

Напряжение насыщения база-эмиттер при токе коллектора 2А, базы 0,5А — 1,6в.

Рассеиваемая мощность коллектора — 75 Вт на радиаторе, 2 Вт — без.

Транзисторы MJE13009(13009)

Транзисторы MJE13009(13009) кремниевые мощные низкочастотные высоковольтные,структуры n-p-n, Корпус пластиковый TO-126. Маркировка буквенно — цифровая, на корпусе. На рисунке ниже — цоколевка MJE13009(13009).

Наиболее важные параметры.

Коэффициент передачи тока — от 8 до 40.

Максимально допустимое напряжение коллектор-эмиттер — 700 В.

Максимальный ток коллектора — постоянный 12 А, пульсирующий — 24 А.

Напряжение насыщения коллектор-эмиттер при токе коллектора 5А, базы 1 А — 1в.

Напряжение насыщения база-эмиттер при токе коллектора 5А, базы 1 А — 1,2в.

Рассеиваемая мощность коллектора — около 100 Вт(на радиаторе).

Граничная частота передачи тока — 4 МГц.

Использование каких — либо материалов этой страницы, допускается при наличии ссылки на сайт «Электрика это просто».

Источник

Транзистор MJE13005: параметры, цоколевка, аналог, datasheet

MJE13005 — биполярный, кремниевый, мощный транзистор. Применяется в импульсных преобразователях напряжения, сетевых источниках вторичного электропитания, приводах и регуляторах.

Характеристики транзистора MJE13005

Структура : NPN
Напряжение коллектор-эмиттер U_кэо (max) : 400 В
Напряжение коллектор-база U_кбо (max) : 700 В
Напряжение эмиттер-база U_эбо (max) : 9 В
Допустимый ток коллектора I_к (max) : 4.00 А
Коэффициент усиления транзистора по току hf_э : от 8 до 40
Граничная частота коэффициента передачи тока f_гр : 4.0 МГц
Рассеиваемая мощность коллектора P_к (max) : 75.00 Вт
Диапазон рабочих температур T_max : от -65 до +150 ˚C
Корпус : TO-220

Цоколевка транзистора MJE13005

Габаритные и установочные размеры транзистора MJE13005

Аналог транзистора MJE13005

Вы можете заменить MJE13005 на: 2SC3795, 2SC3795A, FJP13007, FJP13009, KSE13007, KSE13007F, KSE13009, MJE13005G, MJE13007, MJE13007A, MJE13007G, MJE13009, MJE13009G, MJE13070, MJE13071, MJE16002, MJE16004, MJE8502, MJE8503, STD13007F.

Бессвинцовой версией MJE13005 является транзистор MJE13005G.

Источник

13005 транзистор схема подключения

Наименование производителя: 13005

Тип материала: Si

Максимальная рассеиваемая мощность (Pc): 65 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 5 MHz

Статический коэффициент передачи тока (hfe): 15

13005 Datasheet (PDF)

..1. 13005.pdf Size:114K _jdsemi

R13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13005MD MAIN CHARACTERISTICS Package IC 4AVCEO 400VPC(TO-220HF) 35WPC(TO-220) 75W APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

0.3. mje13005.pdf Size:311K _motorola

Order this documentMOTOROLAby MJE13005/DSEMICONDUCTOR TECHNICAL DATA*MJE13005*Motorola Preferred DeviceDesigner’s Data Sheet4 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTOR

0.4. phe13005 2.pdf Size:55K _philips

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTIONThe PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS

0.5. phe13005x.pdf Size:420K _philips

PHE13005XSilicon diffused power transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications1.2 Features and benefits Fast switching Isolated package High voltage capab

0.6. phe13005.pdf Size:400K _philips

PHE13005Silicon diffused power transistorRev. 03 20 November 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications1.2 Features and benefits Fast switching Low thermal resistance High volt

STT13005High voltage fast-switching NPN power transistorFeatures High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Electronic ballast for fluorescent lighting12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionFigure 1. Internal schematic diagramThe device is manu

STT13005DHigh voltage fast-switching NPN power transistorFeatures Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speedApplications12 Electronic ballast for fluorescent lighting 3SOT-32 Flyback and forward single transistor low power convertersFigure 1. Inte

ST13005NHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: COMPACT FLUORESCENT LAMP (CFL)32 ELECTRONIC BALLASTS FOR1FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIESTO-220DESCRIPTION The device is

STI13005-1High voltage fast-switching NPN power transistorPreliminary dataFeatures STI13005-1 is opposite pin out versus standard IPAK package High voltage capability Low spread of dynamic parameters3 Very high switching speed21ApplicationIPAK Switch mode power supplies (AC-DC converters)Description Figure 1. Internal schematic diagramThe device

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTION The MJE13005 is a silicon multiepitaxial mesaNPN transistor in Jedec TO-220 plastic packageparticularly intended for switch-modeapplications.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV 700 VCEV Collector-Emitter VoltageVCEO Collector-

STX13005High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplicationsTO-92 Compact fluorescent lamp (CFL) TO-92AMMOPACK Switch mode power supplies (AC-DC converters)DescriptionFigure 1. Internal schematic diagram

ST13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications321 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220DescriptionThe device is manufactured using high voltagemulti-epitaxial planar technology

STU13005NHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speed3Application21 Switch mode power supplies (AC-DC converters)IPAKDescriptionThis device is manufactured using high voltage Figure 1. Internal schematic diagrammulti epitaxial planar technology for high swit

STB13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1)32Applications 1I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionFigur

STI13005-HHigh voltage fast-switching NPN power transistorDatasheet — production dataFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operationTAB Very high switching speedApplications321 Electronic ballast for fluorescent lightingI2PAK Switch mode power suppliesDescriptionThis device is manufactured using high volta

0.17. kse13004,13005.pdf Size:48K _fairchild_semi

KSE13004/13005High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : KSE13004 600 V : KSE13005 700 V VCEO Collector-Emitter Voltage : KSE13004

PHD13005NPN power transistor with integrated diodeRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L

0.19. kse13005f.pdf Size:23K _samsung

KSE13005F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 4 A Collector Current (Pulse) IC 8

0.20. mje13005.pdf Size:114K _central

DATA SHEETMJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 VCollector-Emitter Voltage VCEV 700 VEmitter-Base Voltage VEBO 9.0 VCo

DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

A Product Line ofDiodes IncorporatedGreenAPT13005D450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO220F-3, TO251, TO220AB Type C BVCES > 700V Case Material: Molded Plastic, «Green» Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 4A High Collector Current Terminals: Finish — Matte Tin F

0.23. mje13005g.pdf Size:150K _onsemi

MJE13005GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,4 AMPERESolenoid/Relay drivers and Deflection circuits.NP

0.24. 13005ec.pdf Size:158K _utc

UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC

UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100

STD13005ISNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C EESTD13005IS STD13005 I-PAK(S) I-PAK(S) Marking Diagram STD Column 1, 2: Device Code 13005 YWW Colu

STD13005NPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13005 STD13005 TO-220ABAbsolute maximum ratings (Tc=25) Characteristic Symbol Ratings UnitCollector-Bas

STD13005FNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C EESTD13005F STD13005 TO-220F-3LMarking Diagram Column 1 : Manufacturer Column 2 : Production Information AU

STD13005FCNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13005FC STD13005 TO-220F-3SLAbsolute maximum ratings (Tc=25) Characteristic Symbol Ratings UnitColl

0.34. 3dd13005.pdf Size:108K _secos

3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBOCollector to Emitter Voltage VCEO 400 V

0.35. ts13005 b07.pdf Size:364K _taiwansemi

TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

0.36. ts13005ci-cz.pdf Size:361K _taiwansemi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13005DTO-220Plastic Packagewith Built in DiodeABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VVEBOEmitter Base Voltage 9 VCollector Current Continuous IC 4 APower Dissipation

0.38. cdl13005.pdf Size:106K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13005TO-220Plastic PackageUsed in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VVEBOEmitter Base Voltage 9 VCollector Current Co

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCDL13005RNPN PLASTIC POWER TRANSISTORTO-220Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with «T»Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Volt

0.40. cd13005.pdf Size:259K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13005TO-220Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector -Base Voltage 600 VVCEOCollector -Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO

SEMICONDUCTOR MJE13005DCTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.Built-in Free wheeling Diode makes efficient anti saturation operation.Suitable for half bridge light ballast Applications.Low base drive requirement.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 VVCEOCollec

SEMICONDUCTOR MJE13005TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FLUORESCENT LIGHT BALLASTOR APPLICATION.FEATURESExcellent Switching Times: ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING

SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR

SEMICONDUCTOR MJE13005FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FLUORESCENT LIGHT BALLASTOR APPLICATION.FEATURESExcellent Switching Times: ton=0.8 S(Max.), at IC=2AS(Max.), tf=0.9High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC S

SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM R

3DD13005(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Continuo

Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description Switch Regulators TO-220 PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T =25C) A Maximum Temperatures Stora

0.48. eb13005.pdf Size:666K _shenzhen

SY semiconductors Shenzhen SY Semiconductors Co.LTD.EB SERIES TRANSISTORS EB13005FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOAAPPLICATIONFLUORESCENT LAMP ELECTRONIC BALLASTAbsolute Maximum Ratings (Tc=25) TO-220 NPNwww.DataSheet4U.comPARAMETER SYMBOL VALUE UNITCollector Voltage VCBO 700 VBaseCollector Voltage VCEO 400 V

0.49. mje13005.pdf Size:232K _sisemi

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE

0.50. mje13005 1.pdf Size:239K _sisemi

0.51. mje13005d.pdf Size:232K _sisemi

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13005DNPN D / D SERIES TRANSISTORS MJE13005DNPN D

0.52. bld13005dx.pdf Size:587K _sisemi

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS BLD13005DXNPN D / D SERIES TRANSISTORS BLD13005DXNPN D

0.53. mje13005p8.pdf Size:460K _blue-rocket-elect

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

0.54. br3dd13005t8f.pdf Size:439K _blue-rocket-elect

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

0.55. br3dd13005p7r.pdf Size:470K _blue-rocket-elect

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

0.56. mje13005p7.pdf Size:470K _blue-rocket-elect

0.57. br3dd13005p8f.pdf Size:460K _blue-rocket-elect

0.58. br3dd13005lp7r.pdf Size:467K _blue-rocket-elect

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

0.59. mje13005lp7.pdf Size:467K _blue-rocket-elect

0.60. mje13005t8.pdf Size:439K _blue-rocket-elect

0.61. st13005.pdf Size:633K _semtech

ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit700 V Collector Base Voltage VCBO 400 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 VCollector Current IC 4 AOPower Dissipation (Ta = 25 C) Ptot 2 WOPower Dissipati

RoHS MJE13005A(NPN)RoHS SEMICONDUCTORNell High Power ProductsSwitchmode Series NPN Silicon Power Transistors(4A / 400V / 75W)FEATURESVCEO(SUS) 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 ASwitching time — tf = 0.9 s (Max.) @ lC = 2 A 700V blocking capability123TO-220AB(MJE13005A) DESCRIPTION These devices are designed for high-

0.63. ksh13005w.pdf Size:144K _shantou-huashan

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13005W HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot W TC=25 60

NPN R 3DD13005 F9-1 3DD13005 F9-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 B3 3DD13005 B3 NPN VCEO 450 V IC 2.5 A Ptot TC=25 40 W

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13005 P8D 3DD13005 P8D VCEO 400 V NPN IC 2.5 A Ptot TC=25 60 W

NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD13005 F8-1 3DD13005 F8-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 B5 3DD13005 B5 NPN VCEO 450 V IC 2.5 A Ptot TC=25 50 W

NPN R 3DD13005 F7 3DD13005 F7 NPN VCEO 400 V IC 6 A Ptot TC=25 65 W

NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

NPN R 3DD13005 B3 3DD13005 B3 NPN VCEO 450 V IC 2.5 A Ptot TC=25 40 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot TC=25 60 W

NPN R 3DD13005 F8 3DD13005 F8 NPN VCEO 400 V IC 6 A Ptot TC=25 80 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 P8D 3DD13005 P8D VCEO 400 V NPN IC 2.5 A Ptot TC=25 60 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13005 F7 3DD13005 F7 NPN VCEO 400 V IC 6 A Ptot TC=25 65 W

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13005 A3 3DD13005 A3 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50

NPN R 3DD13005 F8-1 3DD13005 F8-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13005 F8 3DD13005 F8 NPN VCEO 400 V IC 6 A Ptot TC=25 80 W

NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50

NPN R 3DD13005 F9-1 3DD13005 F9-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

0.104. s13005a.pdf Size:113K _jdsemi

RS13005A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.105. 13005adl.pdf Size:121K _jdsemi

R13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.106. h13005adl.pdf Size:120K _jdsemi

RH13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.107. 13005ad.pdf Size:121K _jdsemi

R13005AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.108. 13005d.pdf Size:116K _jdsemi

R13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

0.109. 13005ed.pdf Size:117K _jdsemi

R13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.110. 13005sdl.pdf Size:122K _jdsemi

R13005SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.111. h13005dl.pdf Size:120K _jdsemi

RH13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.112. 13005a.pdf Size:113K _jdsemi

R13005A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.113. h13005.pdf Size:116K _jdsemi

RH13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.114. 13005f.pdf Size:117K _jdsemi

R13005F www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.115. 13005s.pdf Size:114K _jdsemi

R13005S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.116. 13005sd.pdf Size:117K _jdsemi

R13005SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.117. s13005ed.pdf Size:116K _jdsemi

RS13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.118. h13005d 2.pdf Size:118K _jdsemi

RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.119. 13005dl.pdf Size:117K _jdsemi

R13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.120. h13005d.pdf Size:118K _jdsemi

RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.121. 13005dl 2.pdf Size:116K _jdsemi

R13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.122. e13005sdl.pdf Size:123K _jdsemi

RE13005SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.123. mje13005t.pdf Size:299K _first_silicon

SEMICONDUCTORMJE13005TTECHNICAL DATA MJE13005T TRANSISTOR (NPN) unitHigh frequency electronic lightingswitching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25) 1.25 WCP (Tc=25) 50 W CT 150 j T -55150 stg Electrical characteristics(Ta=25) Rating Symbol Test condition Unit

0.124. mje13005f.pdf Size:251K _first_silicon

SEMICONDUCTORMJE13005FTECHNICAL DATAC MJE13005F TRANSISTOR (NPN) ASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+FEATURES LM_H 0 45 0 1

0.125. wbp13005d1.pdf Size:409K _winsemi

WBP13005D1WBP13005D1WBP13005D1WBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De

0.126. wbp13005d.pdf Size:392K _winsemi

WBP13005DWBP13005DWBP13005DWBP13005DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diodeGeneral DescriptionThis Device is designed for high Voltage, High speedswitching Characteristics required such as lightingsystem ,switching mode power supply.Absol

0.127. sbp13005d1.pdf Size:314K _winsemi

SBP13005D1SBP13005D1SBP13005D1SBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-i

0.128. sbp13005d.pdf Size:313K _winsemi

SBP13005DSBP13005DSBP13005DSBP13005DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-in fr

0.129. wbr13005d1.pdf Size:306K _winsemi

WBR13005D1WBR13005D1WBR13005D1WBR13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De

0.130. sbp13005o.pdf Size:508K _winsemi

SBP13005-OSBP13005-OSBP13005-OSBP13005-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for hig

0.131. apt13005t-tf.pdf Size:457K _bcdsemi

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005General Description FeaturesThe APT13005 series are high voltage, high speed, High Switching Speedhigh efficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficencyThe APT13005

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005SGeneral Description FeaturesThe APT13005S is a high voltage, high speed, high High Switching Speedefficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficiencyThe APT13005S

0.133. 13005d.pdf Size:574K _feihonltd

13005D400V,4A,C (2)AvailableRoHS*B (1) 1 COMPLIANT1.Base 2.Collector 3.Emitter E (3)(TC=25C) 700 VVCBO — 400 VVCEO — 9 VVEBO — 4 AIC

0.134. mje13005dq3.pdf Size:244K _foshan

MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P

0.135. mje13005dq4.pdf Size:251K _foshan

MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T

0.136. mje13005q7.pdf Size:249K _foshan

MJE13005Q7(3DD13005Q7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 3.0 A C P

0.137. mje13005dq7.pdf Size:248K _foshan

MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

0.138. mje13005t7.pdf Size:154K _foshan

MJE13005T7(3DD13005T7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

0.139. mje13005vt7.pdf Size:168K _foshan

MJE13005VT7(3DD13005VT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V CBO V 200 V CEO V 9.0 V EBO I 8.0 A C P (Ta=2

0.140. mje13005dq5.pdf Size:239K _foshan

MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

0.141. mje13005dt3.pdf Size:193K _foshan

MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 AB

0.142. mje13005dp5.pdf Size:292K _foshan

MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

0.143. mje13005dt7.pdf Size:204K _foshan

MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

0.144. mje13005drb.pdf Size:235K _foshan

MJE13005DRB NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25)

0.145. std13005i.pdf Size:367K _kodenshi

STD13005INPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code EB C ESTD13005I STD13005 I-PAK I-PAK Marking Diagram STD Column 1, 2: Device Code 13005 YWW Column 3 : Pr

0.146. ksg13005ar.pdf Size:220K _semihow

KSG13005AR SEMIHOW REV.A0,Feb 2009KSG13005ARKSG13005ARSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls3 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted3.8 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collec

0.147. ksu13005a.pdf Size:558K _semihow

KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005AKSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor — High voltage, high speed power switching — Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

0.148. ksd13005a.pdf Size:558K _semihow

0.149. ksh13005a.pdf Size:227K _semihow

KSH13005AKSH13005A SEMIHOW REV.A1,Oct 2007KSH130005AKSH13005ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO-220

0.150. ksh13005af.pdf Size:223K _semihow

KSH13005AFKSH13005AF SEMIHOW REV.A1,Oct 2007KSH130005AFKSH13005AFSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO

0.151. sbp13005s.pdf Size:158K _semiwell

SemiWell Semiconductor SBP13005-S High Voltage Fast Switching NPN Power Transistor Features Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings

0.152. alj13005.pdf Size:150K _sunroc

SUNROCALJ13005 TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) MAXI Parameter Value UnitsCollector-Base Voltage VCBO 700 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 9 VCollector Current IC 2.0 ACollector Power Dissipation PC 50 WJunction Temperature Tj 150 Storag Temperature -55150 Tstg ELECTRICAL CHARACTERISTICS

0.153. e13005-250.pdf Size:163K _thinkisemi

E13005-250PbE13005-250Pb Free Plating ProductMJE Power TransistorProduct specificationMJE13005 seriesSilicon NPN Power TransistorDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. EAbsolute Maximum Ratings ( Ta = 25 )Parameter Value UnitlCollector-Base Voltage VCBO 70

0.154. e13005d-213.pdf Size:204K _thinkisemi

E13005D-213PbE13005D-213Pb Free Plating ProductMJE Power Transistor with Damping DiodeProduct specificationSilicon NPN Power Transistor MJE13005 seriesDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________Absolute Maximum Ratings ( Ta = 25 )Active anti-saturation netwo

0.155. e13005-225.pdf Size:162K _thinkisemi

E13005-225PbE13005-225Pb Free Plating ProductMJE Power TransistorProduct specificationMJE13005 seriesSilicon NPN Power TransistorDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. EAbsolute Maximum Ratings ( Ta = 25 )Parameter Value UnitlCollector-Base Voltage VCBO 70

0.156. ksh13005.pdf Size:191K _inchange_semiconductor

isc Silicon NPN Power Transistor KSH13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

0.157. mjf13005.pdf Size:207K _inchange_semiconductor

isc Silicon NPN Power Transistor MJF13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max.) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

0.158. mje13005.pdf Size:154K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13005 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

0.159. mje13005d.pdf Size:220K _inchange_semiconductor

Isc Silicon NPN Power Transistor MJE13005DDESCRIPTIONHigh Voltage CapabilityHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFluorescent lampElectronic ballastElectronic transformerSwitch mode power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

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